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AP4501SSD データシート(PDF) 2 Page - Advanced Power Electronics Corp.

部品番号 AP4501SSD
部品情報  N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  7 Pages
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メーカー  A-POWER [Advanced Power Electronics Corp.]
ホームページ  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4501SSD データシート(HTML) 2 Page - Advanced Power Electronics Corp.

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N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.031
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=5.3A
-
-
36
mΩ
VGS=4.5V, ID=4A
-
-
55
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5.3A
-
10
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)4
VDS=30V, VGS=0V
-
-
100
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V, VGS=0V
-
-
1
mA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
nA
Qg
Total Gate Charge
2
ID=5.3A
-
8.2
-
nC
Qgs
Gate-Source Charge
VDS=24V
-
2.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.8
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
5.2
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.8
-
ns
tf
Fall Time
RD=15Ω
-
4.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
645
-
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Source Current ( Body Diode )
2
VD=VG=0V , VS=1.2V
-
-
1.7
A
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
-
1.2
V
Schottky Characteristics@Tj=25℃
℃
℃
℃
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VF
Forward Voltage Drop
IF=1A
-
-
0.5
V
Irm
Maximum Reverse Leakage Current
Vr=30V
-
-
100
uA
AP4501SSD
±100



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