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APTM20DAM05 データシート(PDF) 2 Page - Advanced Power Technology |
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APTM20DAM05 データシート(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page ![]() APTM20DAM05 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 200 V VGS = 0V,VDS = 200V Tj = 25°C 200 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 158.5A 5 m W VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 27.4 Coss Output Capacitance 8.72 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.38 nF Qg Total gate Charge 448 Qgs Gate – Source Charge 172 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 300A 188 nC Td(on) Turn-on Delay Time 28 Tr Rise Time 56 Td(off) Turn-off Delay Time 81 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A RG = 1.2 W 99 ns Eon Turn-on Switching Energy u 1852 Eoff Turn-off Switching Energy v Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω 1820 µJ Eon Turn-on Switching Energy u 2432 Eoff Turn-off Switching Energy v Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω 2124 µJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 85°C 240 A IF = 240A 1.1 1.15 IF = 480A 1.4 VF Diode Forward Voltage IF = 240A Tj = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time IF = 240A VR = 133V di/dt = 800A/µs Tj = 125°C 60 ns Tj = 25°C 240 Qrr Reverse Recovery Charge IF = 240A VR = 133V di/dt = 800A/µs Tj = 125°C 1000 nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. |
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