APTM50DAM38CT

APT website – http://www.advancedpower.com

7 – 7

Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Forward Characteristics

0

30

60

90

120

00.5

1

1.5

22.5

3

3.5

Reverse Characteristics

0

200

400

600

800

1000

1200

200

300

400

500

600

700

800

Capacitance vs.Reverse Voltage

0

500

1000

1500

2000

2500

1

10

100

1000

APT reserves the right to change, without notice, the specifications and information contained herein

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5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.