CBSL2SS datasheet(1/1 Pages) ASI

部品番号	CBSL2SS

部品情報	NPN SILICON RF POWER TRANSISTOR

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メーカー	ASI [Advanced Semiconductor]

ホームページ	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25 °C

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 1.0 mA

45

V

BVCER

IC = 5.0 mA

RBE = 220 Ω

30

V

BVEBO

IE = 1.0 mA

3.5

V

ICBO

VCB = 28 V

500

µA

hFE

VCE = 5.0 V

IC = 100 mA

20

120

---

COB

VCB = 24 V

f = 1.0 MHz

3.5

pF

PG

η

C

VCC = 24 V

POUT = 2.0 V

f = 960 MHz

9.0

50

dB

%

NPN SILICON RF POWER TRANSISTOR

CBSL2SS

DESCRIPTION:

The

ASI CBSL2SS is Designed for

UHF Class A Amplifier Applications in

Cellular Base Station Equipment.

FEATURES:

• Pg = 9.0 dB min. @ 960 MHz

• P

1dB = 2.0 Watts min. at 960 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

2.0 A

VCBO

45 V

VCER

30 V

VEBO

3.5 V

PDISS

7.0 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +150 °C

θ

JC

25

°C/W

PACKAGE STYLE .205 4L STUD

ORDER CODE: ASI10868

E

A

B

H

E

F

.098 / 2.500

.161 / 4.100

.028 / 0.700

.976 / 24.800

.138 / 3.500

.976 / 24.800

inches / m m

MIN IM U M

A

G

F

E

D

C

B

1.000 / 25.4000

.110 / 2.800

.196 / 5.000

1.000 / 25.4000

M AXIM U M

inches / m m

.031 / 0.800

C

D

H

I

J

.200 / 5.100

.425 / 10.800

.004 / 0.100

.006 / 0.150

.465 / 11.800

2.05 / 5.200

G

J

#8-32U N C

.200 / 5.100

.208 / 5.300

DIM

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