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APM4350KP データシート(PDF) 2 Page - Anpec Electronics Coropration |
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APM4350KP データシート(HTML) 2 Page - Anpec Electronics Coropration |
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2 / 11 page ![]() Copyright © ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 www.anpec.com.tw 2 APM4350KP Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current TC=25 °C 50 A TC=25 °C 140 IDP 300µs Pulse Drain Current Tested TC=100 °C 80 A Mounted on Large Heat Sink TC=25 °C 60 ID Continuous Drain Current TC=100 °C 35 A TC=25 °C 50 PD Maximum Power Dissipation TC=100 °C 20 W RθJC Thermal Resistance-Junction to Case 2.5 °C/W Mounted on PCB of 1in 2 pad area TA=25 °C 13.5 ID Continuous Drain Current TA=100 °C 8.5 A TA=25 °C 2.5 PD Maximum Power Dissipation TA=100 °C 1 W RθJA Thermal Resistance-Junction to Ambient 50 °C/W Mounted on PCB of Minimum Footprint TA=25 °C 10 ID Continuous Drain Current TA=100 °°C 6 A TA=25 °C 1.5 PD Maximum Power Dissipation TA=100 °C 0.5 W RθJA Thermal Resistance-Junction to Ambient 75 °C/W |
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