2SA1981N datasheet(2/4 Pages) AUK

2 / 4 page

KSD-T0C037-000

Absolute Maximum Ratings

(Ta=25

°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

-35

Collector-emitter voltage

VCEO

-30

Emitter-base voltage

VEBO

-5

Collector current

-800

Collector power dissipation

400

Junction temperature

150

°C

Storage temperature range

Tstg

-55~150

°C

Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ. Max.

Unit

Collector-emitter breakdown voltage

BVCEO

IC=-1mA, IB=0

-30

Collector cut-off current

ICBO

VCB=-35V, IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1

µA

DC current gain

hFE

VCE=-1V, IC=-100mA

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB=-20mA

-0.5

Base-emitter voltage

VBE

VCE=-1V, IC=-100mA

-0.73

-0.95

Transition frequency

VCE=-5V, IC=-10mA

200

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

: hFE rank / O : 100~200, Y : 160~320

2SA1981N

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