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AP64352 データシート(PDF) 7 Page - Diodes Incorporated |
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AP64352 データシート(HTML) 7 Page - Diodes Incorporated |
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7 / 21 page ![]() AP64352 Document number: DS41978 Rev. 5 - 2 7 of 21 www.diodes.com August 2019 © Diodes Incorporated AP64352 Typical Performance Characteristics (AP64352 at TA = +25°C, VIN = 12V, VOUT = 5V, fsw = 500kHz (RT= 200kΩ ± 1%), CSS = 10nF, unless otherwise specified.) Figure 4. Efficiency vs. Output Current, VIN = 12V Figure 5. Efficiency vs. Output Current, VIN = 24V Figure 6. Line Regulation Figure 7. Load Regulation Figure 8. Feedback Voltage vs. Temperature Figure 9. Power MOSFET RDS(ON) vs. Temperature 50 55 60 65 70 75 80 85 90 95 100 0.001 0.010 0.100 1.000 10.000 IOUT (A) VOUT = 5V, L = 5.5 μH VOUT = 3.3V, L = 4.7 μH 50 55 60 65 70 75 80 85 90 95 100 0.001 0.010 0.100 1.000 10.000 IOUT (A) VOUT = 5V, L = 5.5 μH VOUT = 3.3V, L = 4.7 μH 4.84 4.86 4.88 4.90 4.92 4.94 4.96 4.98 5.00 5.02 5.04 5 10 15 20 25 30 35 40 45 VIN (V) IOUT = 0A IOUT = 0.5A IOUT = 1.5A IOUT = 2.5A IOUT = 3.5A 4.920 4.925 4.930 4.935 4.940 4.945 4.950 4.955 4.960 4.965 4.970 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IOUT (A) VIN = 12V VIN = 24V 0.792 0.793 0.794 0.795 0.796 0.797 0.798 0.799 0.800 0.801 0.802 -50 -25 0 25 50 75 100 125 150 Temperature ( °C) 20 30 40 50 60 70 80 90 100 110 120 -50 -25 0 25 50 75 100 125 150 Temperature ( °C) High-Side MOSFET Low-Side MOSFET |
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