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1PS300 データシート(PDF) 2 Page - NXP Semiconductors

部品番号 1PS300
部品情報  High-speed double diode
PDF  8 Pages
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

1PS300 データシート(HTML) 2 Page - NXP Semiconductors

  1PS300 Datasheet HTML 1Page - NXP Semiconductors 1PS300 Datasheet HTML 2Page - NXP Semiconductors 1PS300 Datasheet HTML 3Page - NXP Semiconductors 1PS300 Datasheet HTML 4Page - NXP Semiconductors 1PS300 Datasheet HTML 5Page - NXP Semiconductors 1PS300 Datasheet HTML 6Page - NXP Semiconductors 1PS300 Datasheet HTML 7Page - NXP Semiconductors 1PS300 Datasheet HTML 8Page - NXP Semiconductors  
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1999 May 26
2
Philips Semiconductors
Product specification
High-speed double diode
1PS300
FEATURES
• Very small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS300 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
very small rectangular SOT323
(SC-70) plastic SMD package.
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
common anode
Fig.1 Simplified outline SOT323 (SC-70) and symbol.
Marking code: A3.
Top view
21
3
MAM082
21
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
80
V
IF
continuous forward current
single diode loaded; see Fig.2;
note 1
200
mA
double diode loaded; see Fig.2;
note 1
170
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge
t=1
µs
4A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C



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