NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR

BUF508A

TO-220FP Fully Isolated

Plastic Package

Applications

High voltage, high - speed switching transistor in TO - 220FP package envelope intended

for use in horizontal deflection of colour television circuits.

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector Emitter Voltage Peak Value; VBE=O

VCESM

1500

V

Collector Emitter Voltage

700

V

Collector Current (DC)

8.0

A

Collector Current (Peak)

15

A

Base Current (DC)

4.0

A

Base Current (Peak)

6.0

A

Reverse Base Current

- IB(AV)

100

mA

(DC or average over any 20ms period)

Reverse Base Current *(Peak Value)

5.0

A

Power Dissipation upto Tmb=25ºC

Ptot

60

W

Operating & Storage Junction

-65 to +150

ºC

Temperature Range

*Turn off current

ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

MAX

UNIT

Collector Cut off Current **

VCE=VCESM max, VBE=0

-

1.0

mA

Tj=125ºC

VCE=VCESM max, VBE=0

-

2.0

mA

Emitter Cut off Current

-10

mA

Collector Emitter (sus) Voltage

700

-

V

Collector Emitter Saturation Voltage

-

1.0

V

Base Emitter Saturation Voltage

VBE(Sat)

-

1.3

V

DYNAMIC CHARACTERISTISC

Transition Frequency

ft

IC=0.1A, VCE=5V, f=5MHz

TYP 7.0

MHz

Collector Capacitance

Cc

IE=ie=0, VCB=10V, f=1MHz

TYP 125

pF

**Measured with half - sinewave voltage (curve tracer)

Q

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company