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TCD2564DG データシート(PDF) 6 Page - Toshiba Semiconductor |
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TCD2564DG データシート(HTML) 6 Page - Toshiba Semiconductor |
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6 / 13 page ![]() TCD2564DG Rev.1.2 2019-01-15 5 © 2017 Toshiba Electronic Devices & Storage Corporation Recommended Operating Conditions (Ta 25°C) For best performance, the device should be used within the Recommended Operating Conditions. Characteristics Symbol Min Typ. Max Unit Clock pulse voltage “H” level V 1A V 2A 4.75 5.0 5.5 V “L” level 0 0 0.25 Last stage clock pulse voltage “H” level V 2B 4.75 5.0 5.5 V “L” level 0 0 0.25 Shift pulse voltage “H” level VSH 4.75 5.0 5.5 V “L” level 0 0 0.25 Reset pulse voltage “H” level VRS 4.75 5.0 5.5 V “L” level 0 0 0.25 Clamp pulse voltage “H” level VCP 4.75 5.0 5.5 V “L” level 0 0 0.25 Power supply voltage VOD 9.5 10.0 10.5 V Clock Characteristics (Ta 25°C) For best performance, the device should be used within the Recommended Operating Conditions. Characteristics Symbol Min Typ. Max Unit Clock pulse frequency f 0.2 1.0 30 MHz Reset pulse frequency fRS 1.0 30 MHz Clamp pulse frequency fCP 1.0 30 MHz Clock capacitance (Note 11) C 1A 170 pF C 2A 173 Last stage clock capacitance C B 5 pF Shift gate capacitance CSH (SH1, SH2) 6 pF CSH (SH3) 22 Reset gate capacitance CRS 6 pF Clamp gate capacitance CCP 6 pF Note 11: VOD 10 V, Input capacitance par a pin. |
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