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ISO808TR データシート(PDF) 9 Page - STMicroelectronics |
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ISO808TR データシート(HTML) 9 Page - STMicroelectronics |
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9 / 38 page ![]() Table 6. Diagnostic pin and output protection function Symbol Parameter Test conditions Min. Typ. Max. Unit VFAULT FAULT pin open drain voltage output low IFAULT = 5 mA 0.4 V ILFAULT FAULT output leakage current VFAULT = 5 V 1 μA IPEAK Maximum DC output current before limitation VCC = 24 V RLOAD = 0 Ω 2.3 A ILIM Short circuit current limitation ISO808 0.7 1.9 A ISO808-1 1 Hyst ILIM tracking limits 0.3 A TJSD Junction shutdown temperature 150 175 200 °C TJR Junction reset temperature 150 °C TJHYST Junction thermal hysteresis 15 °C TCSD Case shutdown temperature 125 130 135 °C TCR Case reset temperature 115 °C TCHYST Case thermal hysteresis 15 °C VDEMAG Output voltage at turn-off IOUT = 0.5 A; ILOAD ≥ 1 mH VCC-50 VCC-54 VCC-58 V Table 7. Power switching characteristics (VCC = 24 V; RLOAD = 48 Ω; -40 °C < TJ < 125 °C) Symbol Parameter Test conditions Min. Typ. Max. Unit dV/dt(ON) Turn-on voltage slope (see Figure 4 ) 0.7 V/μs tr Rise time 19 32 μs dV/dt(OFF) Turn-off voltage slope 1.5 V/μs tf Fall time 7 23 μs td(ON) Turn-ON delay time (see Figure 5, Figure 6) 15 24 μs td(OFF) Turn-OFF delay time 43 80 μs tw(OUT_EN) OUT_EN pulse width (see Figure 8, Figure 9) 150 ns tp(OUT_EN) OUT_EN propagation delay 40 80 μs ISO808, ISO808-1 Electrical characteristics DS14169 - Rev 1 page 9/38 |
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