2SA2184 datasheet(1/3 Pages) ISC

部品番号	2SA2184

部品情報	isc Silicon PNP Power Transistor

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2023-02-07

1

isc Silicon PNP Power Transistor

2SA2184

DESCRIPTION

·

Low Collector Saturation Voltage-

: VCE(sat)= -0.7V(Max.)@IC= -0.3A

·

High Switching Speed

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for high current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-480

V

VCEO

Collector-Emitter Voltage

-450

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-1

A

IB

Base Current-Continuous

-0.5

A

PC

Collector Power Dissipation

@Ta=25℃

1

W

Collector Power Dissipation

@TC=25℃

20

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

同様の部品番号 - 2SA2184

メーカー	部品番号	データシート	部品情報
Toshiba Semiconductor	2SA2184	213Kb / 5P	High Voltage Switching Applications
Toshiba Semiconductor	2SA2184	1Mb / 73P	Bipolar Small-Signal Transistors
Comchip Technology	2SA2184-HF	776Kb / 4P	Silicon Power Transistor REV:A

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