2SC2705 datasheet(1/2 Pages) ISC

部品番号	2SC2705

部品情報	isc Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor

2SC2705

DESCRIPTION

·

Current-Gain sustaining Voltage

:VCEO = 150(min)

·

Good Linearity of hFE

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Audio Frequency Amplifier Applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

50

mA

IB

Base Current-Continuous

5

mA

PC

Collector Power Dissipation

@ Tc=25℃

800

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

同様の部品番号 - 2SC2705

メーカー	部品番号	データシート	部品情報
Toshiba Semiconductor	2SC2705	142Kb / 2P	TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
Toshiba Semiconductor	2SC2705	117Kb / 5P	Silicon NPN Epitaxial Type (PCT Process)
Foshan Blue Rocket Elec...	2SC2705	900Kb / 6P	Silicon NPN transistor in a TO-92LM Plastic Package
Toshiba Semiconductor	2SC2705	117Kb / 5P	Silicon NPN Epitaxial Type (PCT Process)

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