D45VH10 datasheet(2/3 Pages) ISC

部品番号	D45VH10

部品情報	isc Silicon PNP Power Transistors

PDF	3 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

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2022-12-09

isc Silicon PNP Power Transistors

D45VH10

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VEBO

Emitter-Base Breakdown Voltage

IE= -1mA； IC= 0

-7

VCEO

Collector-Emitter Breakdown Voltage

IC= -10mA；IB= 0

-80

VCBO

Collector-Base Breakdown Voltage

IC= -1mA；IB= 0

-100

ICEO

Collector-Emitter Cutoff Current

VCE= -80V；IB= 0

ICBO

Collector-Base Cutoff Current

VCE= -100V；IB= 0

0.1

IEBO

Emitter Cutoff Current

VEB= -7V；IC= 0

-10

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -8A ；IB= -0.8 A

-1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= -8A；IB= -0.8 A

-1.2

hFE-1

DC Current Gain

IC= -2A； VCE= -1V

hFE-2

DC Current Gain

IC= -4A ; VCE= -1V

Power and temperature curve

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