ABSOLUTE MAXIMUM RATINGS

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

VCEO

VCBO

VEBO

IC

SS8550

Unit

Vdc

Vdc

Vdc

Adc

Rating

Characteristics

Symbol

Min

Max

Unit

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC= -0.1 mAdc, IB=0)

Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)

Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)

Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc)

Emitter Cutoff Current(V

= -5 Vdc, I =0 Vdc)

1. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%

<

<

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

I

-5.0

-

-

-

-

-

-0.1

Vdc

Vdc

Vdc

uAdc

uAdc

SS8550

Tstg

PD

C

C

WEITRON

http://www.weitron.com.tw

Plastic-Encapsulate Transistors

PNP Silicon

(Ta=25 C)

-40

-5.0

-1.5

-25

EMITTER

BASE

Total Device Dissipation T =25 C

1.0

W

Junction Temperature

T j

150

Storage Temperature

-55 to +150

-25

-40

-0.1

EB

EBO

A

TO-92

1

2

3

1. EMITTER

2. BASE

3. COLLECTOR

COLLECTOR

3

2

1

SS8550=SS8550D

DEVICE MARKING

(1)

C