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FDB8441 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 FDB8441
部品情報  isc N-Channel MOSFET Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FDB8441 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
FDB8441
FEATURES
·
Drain Current : ID=120A@ TC=25℃
·
Drain Source Voltage
: VDSS=40V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) =2.5mΩ(Max) @ VGS= 10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
motor drive, DC-DC converter, power switch
and solenoid drive.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
40
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous;@Tc=25℃
120
A
IDM
Drain Current-Single Pulsed
480
A
PD
Total Dissipation
300
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.5
℃
/W


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