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2

isc Silicon NPN Power Transistor

TIPL760

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNI

T

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA

400

V

ICBO

Base Cutoff current

VCB= 850V, IE = 0

50

µA

ICE O

Collector Cutoff current

VCE= 400V, IE= 0

50

µA

IEBO

Emitter Cutoff current

VEB= 10V, IC= 0

1

mA

VCE (sat)

Collector-Emitter Saturation Voltage

IC= 2.5A, IB= 0.5A

IC= 4A, IB= 0.8A

1.0

2.5

V

VBE (sat)

Base-Emitter Saturation Voltage

IC= 2.5A, IB= 0.5A

IC= 4A, IB= 0.8A

1.2

1.4

V

hFE

DC Current Gain

IC= 0.5A; VCE= 5V

20

60

ft

Current gain bandwidth product

VCE = 10 V IC = 0.5 A f = 1 MHz

12

MHZ

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment

which could have applications in hazardous environments, aerospace industry, or medical

field. Please contact us if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular

purpose, nor does ISC assume any liability arising from the application or use of any products, and

specifically disclaims any and all liability, including without limitation special, consequential or

incidental damages.