THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

2.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

T est Con ditio ns

Min .

T yp.

Max.

Uni t

ICES

Collector Cut -off

Current (VBE =0)

VCE = 1300 V

VCE = 1300 V

Tj = 125

oC

1

2

mA

mA

IEBO

Emitter Cut- off Current

(IC =0)

VEB = 5 V

100

µA

VCEO(s us)

Collector-Emitt er

Sustaining Voltage

IC =100 mA

700

V

VEBO

Emitter-Base Voltage

(IC =0)

IE =10 mA

10

V

VCE(sat)

∗ Collector-Emitter

Sat uration Voltage

IC =5 A

IB =1.25 A

1.5

V

VBE(sat)

∗ Base-Emitter

Sat uration Voltage

IC =5 A

IB =1.25 A

1.3

V

hFE

∗

DC Current Gain

IC =5 A

VCE =5 V

IC =5 A

VCE =5 V

Tj =100

oC

6

4

ts

tf

RESISTIVE LOAD

Storage Time

Fall Time

VCC =400 V

IC =5 A

IB1 = 1.25 A

IB2 =2.5 A

2. 7

190

3.9

280

µs

ns

ts

tf

INDUCT IVE LOAD

Storage Time

Fall Time

IC =5 A

f = 15625 Hz

IB1 = 1.25 A

IB2 =-2.5 A

Vcefly back =1050 sin







π

10

10

6





tV

2. 3

350

µs

ns

ts

tf

INDUCT IVE LOAD

Storage Time

Fall Time

IC = 5 A

f = 31250 Hz

IB1 = 1.25 A

IB2 =-2.5 A

Vcefly back =1200 sin







π

5

10

6







tV

2. 3

200

µs

ns

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Thermal Impedance

BUH513

2/7