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STP10NK80Z データシート(PDF) 1 Page - STMicroelectronics |
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STP10NK80Z データシート(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() This is information on a product in full production. March 2012 Doc ID 8911 Rev 7 1/17 17 STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet — production data Features ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeability Applications ■ Switching application Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Figure 1. Internal schematic diagram Type VDSS RDS(on) ID Pw STP10NK80Z 800V <0.90 Ω 9A 160 W STP10NK80ZFP 800V <0.90 Ω 9A 40 W STW10NK80Z 800V <0.90 Ω 9A 160 W TO-220 TO-220FP TO-247 1 2 3 TAB 1 2 3 D(2,TAB) G(1) S(3) AM01476v1 Table 1. Device summary Part number Marking Package Packaging STP10NK80Z P10NK80Z TO-220 Tube STP10NK80ZFP P10NK80ZFP TO-220FP Tube STW10NK80Z W10NK80Z TO-247 Tube www.st.com |
同様の部品番号 - STP10NK80Z |
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同様の説明 - STP10NK80Z |
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