STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z

1 Absolute maximum ratings

3/19

Table 3.

Avalanche characteristics

Table 4.

Gate-source zener diode

1.1

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER

DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the

device’s ESD capability, but also to make them safely absorb possible voltage transients that

may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Symbol

Parameter

Max Value

Unit

Avalanche Current, repetitive or

Not-Repetitive (pulse width limited by Tj max)

9A

Single Pulse Avalanche Energy

300

mJ

Repetitive Avalanche Energy

(pulse width limited by Tj max)

3.5

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source

Breakdown Voltage

Igs=±1mA

(Open Drain)

30

V