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QB-R5F100SL-TB データシート(PDF) 167 Page - Renesas Technology Corp

部品番号 QB-R5F100SL-TB
部品情報  True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
PDF  207 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

QB-R5F100SL-TB データシート(HTML) 167 Page - Renesas Technology Corp

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RL78/G13
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0131EJ0350 Rev.3.50
167 of 200
Jun 30, 2020
(4) When reference voltage (+) = Internal reference voltage (ADREFP1 = 1, ADREFP0 = 0), reference voltage (–) =
AVREFM/ANI1 (ADREFM = 1), target pin : ANI0, ANI2 to ANI14, ANI16 to ANI26
(TA = –40 to +105°C, 2.4 V
≤ EVDD0 = EVDD1 ≤ VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V, Reference voltage (+) = VBGR Note 3,
Reference voltage (–) = AVREFM Note 4 = 0 V, HS (high-speed main) mode)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Resolution
RES
8
bit
Conversion time
tCONV
8-bit resolution
2.4 V
≤ VDD ≤ 5.5 V
17
39
µs
Zero-scale errorNotes 1, 2
EZS
8-bit resolution
2.4 V
≤ VDD ≤ 5.5 V
±0.60
%FSR
Integral linearity errorNote 1
ILE
8-bit resolution
2.4 V
≤ VDD ≤ 5.5 V
±2.0
LSB
Differential linearity error Note 1
DLE
8-bit resolution
2.4 V
≤ VDD ≤ 5.5 V
±1.0
LSB
Analog input voltage
VAIN
0
VBGR Note 3
V
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. Refer to 3.6.2 Temperature sensor/internal reference voltage characteristics.
4. When reference voltage (–) = VSS, the MAX. values are as follows.
Zero-scale error: Add ±0.35%FSR to the MAX. value when reference voltage (–) = AVREFM.
Integral linearity error: Add ±0.5 LSB to the MAX. value when reference voltage (–) = AVREFM.
Differential linearity error: Add ±0.2 LSB to the MAX. value when reference voltage (–) = AVREFM.



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