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QB-R5F100SL-TB データシート(PDF) 170 Page - Renesas Technology Corp |
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QB-R5F100SL-TB データシート(HTML) 170 Page - Renesas Technology Corp |
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170 / 207 page ![]() RL78/G13 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C) R01DS0131EJ0350 Rev.3.50 170 of 200 Jun 30, 2020 3.7 RAM Data Retention Characteristics (TA = –40 to +105°C, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Data retention supply voltage VDDDR 1.44Note 5.5 V Note This depends on the POR detection voltage. For a falling voltage, data in RAM are retained until the voltage reaches the level that triggers a POR reset but not once it reaches the level at which a POR reset is generated. VDD STOP instruction execution Standby release signal (interrupt request) STOP mode RAM data retention VDDDR Operation mode 3.8 Flash Memory Programming Characteristics (TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit CPU/peripheral hardware clock frequency fCLK 2.4 V ≤ VDD ≤ 5.5 V 1 32 MHz Number of code flash rewrites Notes 1, 2, 3 Cerwr Retained for 20 years TA = 85°C Note 4 1,000 Times Number of data flash rewrites Notes 1, 2, 3 Retained for 1 years TA = 25°C 1,000,000 Retained for 5 years TA = 85°C Note 4 100,000 Retained for 20 years TA = 85°C Note 4 10,000 Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite.The retaining years are until next rewrite after the rewrite. 2. When using flash memory programmer and Renesas Electronics self programming library. 3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics Corporation. 4. This temperature is the average value at which data are retained. |
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