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2SC2721 データシート(PDF) 3 Page - Renesas Technology Corp |
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2SC2721 データシート(HTML) 3 Page - Renesas Technology Corp |
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3 / 8 page ![]() 1998 © Document No. D16149EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING DATA SHEET 2002 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. FEATURES • Complementary transistor with 2SA1154 • High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5.0 V Collector current (DC) IC(DC) 0.7 A Collector current (pulse) IC(pulse)*1.0 A Total power dissipation PT 1W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C *PW ≤ 10 ms, duty cycle ≤ 50% PACKAGE DRAWING (UNIT: mm) ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 60 V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 100 nA DC current gain hFE1 VCE = 1.0 V, IC = 0.1 A * 90 200 400 DC current gain hFE2 VCE = 1.0 V, IC = 0.5 A * 50 150 DC base voltage VBE VCE = 6.0 V, IC = 10 mA 600 635 700 mV Collector saturation voltage VCE(sat) IC = 0.5 A, IB = 50 mA * 0.12 0.35 V Base saturation voltage VBE(sat) IC = 0.5 A, IB = 50 mA * 0.90 1.2 V Output capacitance Cob VCB = 6.0 V, IE = 0, f = 1.0 MHz 13 pF Gain bandwidth product fT VCE = 6.0 V, IE = −10 mA 110 MHz Turn-on time ton 60 ns Storage temperature tstg 600 ns Turn-off time toff Refer to the test circuit. 650 ns * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed hFE CLASSIFICATION Marking MA LA KA hFE1 90 to 180 135 to 270 200 to 400 |
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