Data Sheet P15364EJ1V0DS

2

2SC5704

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

–

–

200

nA

Emitter Cut-off Current

IEBO

VBE = 1 V, IC = 0 mA

–

–

200

nA

DC Current Gain

hFE

Note 1

VCE = 2 V, IC = 5 mA

50

70

100

–

RF Characteristics

Gain Bandwidth Product

fT

VCE = 3 V, IC = 30 mA, f = 2 GHz

20.0

25.0

–

GHz

Insertion Power Gain

S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz

14.0

17.0

–

dB

Noise Figure

NF

VCE = 2 , IC = 5 mA, f = 2 Hz,

ZS = Zopt

–1.1

1.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 2 V, IE = 0 mA, f = 1 MHz

–

0.14

0.24

pF

Maximum Available Power Gain

MAG

Note 3

VCE = 2 V, IC = 20 mA, f = 2 GHz

−

19.0

−

dB

Maximum Stable Power Gain

MSG

Note 4

VCE = 2 V, IC = 20 mA, f = 2 GHz

−

20.0

−

dB

Gain 1 dB Compression Output Power

PO (1 dB)

VCE = 2 V, IC = 20 mA, f = 2 GHz

−

11.0

−

dBm

3rd Order Intermodulation Distortion

Output Intercept Point

OIP3

VCE = 2 V, IC = 20 mA, f = 2 GHz

−

22.0

−

dBm

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when

the emitter is connected to the guard pin

3. MAG =

4. MSG =

hFE CLASSIFICATION

Rank

FB

Marking

zC

hFE Value

50 to 100

(k –

√√√√ (k2 – 1) )

S21

S12

S21

S12