N-Channel Enhancement Mode Field Effect Transistor

CEM6056L

FEATURES

60V, 14.5A, RDS(ON) = 7.8 mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation

VDS

VGS

ID

PD

IDM

60

2.5

58

14.5

±20

V

W

A

A

V

1

SO-8

1

RoHS compliant.

D

D

D

D

S

S

S

G

1

2

3

4

8

7

6

5

http://www.cet-mos.com

Rev 3. 2015.Dec

Details are subject to change without notice .

RDS(ON) = 10 mΩ @VGS = 4.5V.

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient b

Parameter

Symbol

Limit

Units

C/W

50

RθJA