Nexperia

PEMB3

50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] [2] -

-

625

K/W

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

416

K/W

[1] Device mounted on an FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

006aac751

10-5

10

10-2

10-4

102

10-1

tp (s)

10-3

103

1

102

10

103

Zth(j-a)

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint

Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

PEMB3

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Product data sheet

28 December 2022

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