Nexperia

2PD602ASL-Q

50 V, 500 mA NPN general-purpose transistors

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

60

V

VCEO

collector-emitter voltage open base

-

50

V

VEBO

emitter-base voltage

open collector

-

5

V

IC

collector current

-

500

mA

ICM

peak collector current

-

1

A

IBM

peak base current

single pulse; tp ≤ 1 ms

-

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

500

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = 60 V; IE = 0 A; Tamb = 25 °C

-

-

10

nA

ICBO

collector-base cut-off

current

VCB = 60 V; IE = 0 A; Tj = 150 °C

-

-

5

µA

IEBO

emitter-base cut-off

current

VEB = 4 V; IC = 0 A; Tamb = 25 °C

-

-

10

nA

hFE

DC current gain

VCE = 10 V; IC = 150 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

170

-

340

VCEsat

collector-emitter

saturation voltage

IC = 300 mA; IB = 30 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-

600

V

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

-

15

pF

fT

transition frequency

VCE = 10 V; IC = 50 mA; f = 100 MHz;

Tamb = 25 °C; pulsed: tp ≤ 300 µs; δ ≤

0.02

180

-

-

MHz

2PD602ASL-Q

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Product data sheet

12 January 2022

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