HIP2060

FN3983 Rev 5.00

Page 2 of 7

April 1998

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HIP2060

UNITS

Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range . . . . . VDS

60

V

Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

60

V

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

20

V

Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ISD

10

A

Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . IDM

25

A

Continuous Drain Current, each Output, all Outputs on (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .IDS

10

A

Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . EAS

100

mJ

Continuous Power Dissipation at TC = 25oC (Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . PD

46

W

Continuous Power Dissipation, Derate above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.37

W/oC

Thermal Information

JA

60

oC/W

Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC

-40 to 125

oC

Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-40 to 150

oC

Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

oC

Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . VD1S2

60

V

NOTES:

1. Pulse width limited by maximum junction temperature.

2. Drain current limited by package construction.

3. VDD = 25V, Start TJ = 25oC, L = 1.5mH, RGS = 50, R = 0. See Figures 2, 12, and 13.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain-Source Breakdown Voltage

BVDSS

ID = 100A, VGS = 0V

TC = -40oC to

125oC

60

-

-

V

TC = 25oC-

70

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250A

1.5

2.3

2.7

V

Drain1-Source2 Breakdown Voltage

(Across D1)

BVD1S2

ID1S2 = 1A,

VG1S1, VG2S2 = 0V

TC = 25oC

-

105

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 60V

VGS = 0V

TC = 25oC-

-

1

A

Drain1-Source2 Current (Through D1)

ID1S2

VD1S2 = 60V

VG1S1 = 0V, VG2S2 = 0V

TC = 25oC-

0.3

1

A

TC = 125oC-

1

-

A

Drain-Source On-State Voltage

(Note 4)

VDS(ON)

ID = 10A, VGS = 15V

-

0.9

1.25

V

ID = 10A, VGS = 10V

-

1.1

1.5

V

Forward Gate Current, Drain Short

Circuited to Source

IGSSF

VDS = 0V, VGS = 20V

-

-

100

nA

Reverse Gate Current, Drain Short

Circuited to Source

IGSSR

VDS = 0V, VGS = -20V

-

-

-100

nA

Drain-Source On Resistance (Note 4)

rDS(ON)

VGS = 15V, ID = 10A

TC = 25oC

-

0.09

0.135



VGS = 15V, ID = 10A

TC = 125oC

-

0.15

0.21



VGS = 10V, ID = 10A

TC = 25oC

-

0.11

0.15



VGS = 10V, ID = 10A

TC = 125oC

-

0.19

0.25



Forward Transconductance (Note 4)

gfs

VDS = 15V, ID = 5A

-

4.5

-

S