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HIP2210EVAL1Z データシート(PDF) 6 Page - Renesas Technology Corp

部品番号 HIP2210EVAL1Z
部品情報  100V, 3A Source, 4A Sink, High Frequency Half-Bridge Drivers with HI/LI or Tri-Level PWM Input and Adjustable Dead Time
PDF  28 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP2210EVAL1Z データシート(HTML) 6 Page - Renesas Technology Corp

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HIP2210, HIP2211
2. Specifications
FN9347 Rev.1.01
Page 6 of 27
Jun.23.20
2.
Specifications
2.1
Absolute Maximum Ratings
2.2
Thermal Information
Parameter (Note 5)
Minimum
Maximum
Unit
Supply Voltage, VDD
-0.3
+20
V
Boot Voltage, HB Referenced to HS
-0.3
+20
V
Bootstrap Voltage, HB Referenced to VSS
-0.3
+120
V
Bootstrap Voltage, HB Referenced to VDD
-0.3
+110
V
Continuous Voltage on HS
The greater of
[-10 or -(20 - VDD)]
+120
V
EN, HI, and LI Voltage
-0.3
VDD + 0.3
V
PWM, VREF, RDT Voltage
-0.3
+6
V
Voltage on LO
-0.3
VDD + 0.3
V
Transient Voltage on LO (Repetitive Transient for 100ns)
-2
-
V
Voltage on HO
VHS - 0.3
VHB + 0.3
V
Transient Voltage on HO (Repetitive Transient for 100ns)
VHS - 2
-
V
ESD Ratings
Value
Unit
Human Body Model (Tested per JS-001-2017)
2.5
kV
Charged Device Model (Tested per JS-002-2014)
1
kV
Latch-Up (Tested per JESD78E; Class 2, Level A)
100
mA
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely
impact product reliability and result in failures not covered by warranty.
Note:
5. All voltages referenced to VSS unless otherwise specified.
Package Type
Thermal Resistance (Typical)
Max Power Dissipation at +25°C
in Free Air (W) (Note 10)
θJA (°C/W)
θJC (°C/W)
8 Ld SOIC (Notes 8, 9)
102
50
1.22
10 Ld TDFN, 8 Ld DFN (Notes 6, 7)
40
2.5
3.12
Notes:
6. θJA is measured in free air with the component mounted on a high-effective thermal conductivity test board with direct attach features.
See TB379.
7. For θJC, the case temperature location is the center of the exposed metal pad on the package underside.
8. θJA is measured with the component mounted on a high-effective thermal conductivity test board in free air. See TB379.
9. For θJC, the case temperature location is taken at the package top center.
10. Specified at published junction to ambient thermal resistance for a junction temperature of +150°C. See Note 6 for test condition to
establish junction to ambient thermal resistance.
Parameter
Minimum
Maximum
Unit
Maximum Junction Temperature
-65
+150
°C
Maximum Storage Temperature Range
-55
+140
°C
Pb-Free Reflow Profile
see TB493



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