N-Channel Enhancement Mode Field Effect Transistor

CEP3205/CEB3205

FEATURES

55V, 108.5A, RDS(ON) = 8.5mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-220 & TO-263 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

55

1.3

200

434

108.5

±20

V

W

A

A

V

W/ C

1

S

G

D

G

S

S

D

D

G

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

Lead-free plating ; RoHS compliant.

http://www.cet-mos.com

Repetitive Avalanche Energy

EAR

1.38

mJ

Drain Current-Continuous

@ TC = 100 C

@ TC = 25 C

76.7

A

Single Pulsed Avalanche Energy d

Single Pulsed Avalanche Current d

EAS

IAS

68

319

A

mJ

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

C/W

62.5

0.75

RθJC

RθJA

Rev 6. 2012.Feb

Details are subject to change without notice .