 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
ISCND436D データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
ISCND436D データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor ISCND436D DESCRIPTION · Collector–Emitter Sustaining Voltage VCEO: 500V(Min) · Low Collector Saturation Voltage : VCE(sat) =1.3V(Max.)@ IC= 2A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 12 A PC Total Power Dissipation @ TC=25℃ 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.57 ℃ /W |
同様の部品番号 - ISCND436D |
|
同様の説明 - ISCND436D |
|
|
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか？ [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Japanese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
