BAS16TH

High-speed switching diode

7 December 2018

Product data sheet

1. General description

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device

(SMD) plastic package.

2. Features and benefits

• High switching speed: trr ≤ 4 ns

• Low leakage current

• Repetitive peak reverse voltage VRRM ≤ 100 V

• Low capacitance

• Small SMD plastic package

• High-temperature applications up to 175 °C

• AEC-Q101 qualified

3. Applications

• High-speed switching

• General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRRM

repetitive peak reverse

voltage

-

-

100

V

IF

forward current

[1]

-

-

215

mA

VR

reverse voltage

Tj = 25 °C

-

-

100

V

VF

forward voltage

IF = 150 mA

[2]

-

-

1.25

V

IR

reverse current

VR = 80 V; Tj = 25 °C

-

-

0.5

µA

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tamb = 25 °C

-

-

4

ns

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint.

[2] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02