Nexperia

BAS19

High-voltage switching diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

120

V

VR

reverse voltage

-

100

V

IF

forward current

continuous

-

200

mA

tp = 1 µs; Tj(init) = 25 °C; square wave

-

9

A

tp = 100 µs; Tj(init) = 25 °C; square wave

-

3

A

IFSM

non-repetitive peak

forward current

tp = 10 ms; Tj(init) = 25 °C; square wave

-

1.7

A

IFRM

repetitive peak forward

current

-

625

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 printed-circuit board.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

[1]

-

-

500

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

-

-

330

K/W

[1] Device mounted on an FR4 printed-circuit board.

BAS19

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© Nexperia B.V. 2019. All rights reserved

Product data sheet

22 March 2019

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