N-Channel Enhancement Mode Field Effect Transistor

CED2015/CEU2015

FEATURES

150V, 50A, RDS(ON) = 20mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-251 & TO-252 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

150

0.77

96.2

200

50

±20

V

W

A

A

V

W/ C

1

S

G

D

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

G

G

S

S

D

D

RoHS compliant.

Rev 2.

2016.Oct

http://www.cet-mos.com

Details are subject to change without notice .

Single Pulsed Avalanche Current d

IAS

35

A

Single Pulsed Avalanche Energy d

EAS

183

mJ

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

C/W

50

1.3

RθJC

RθJA