CEV2306A datasheet(1/5 Pages) CET-MOS

部品番号	CEV2306A

部品情報	N-Channel Enhancement Mode Field Effect Transistor

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メーカー	CET-MOS [CET-MOS Technology Corp.]

ホームページ	https://www.cet-mos.com/en/index.asp

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N-Channel Enhancement Mode Field Effect Transistor

CEV2306A

FEATURES

20V, 2.2A, RDS(ON) = 45mW @VGS = 4.5V.

RDS(ON) = 55mW @VGS = 2.5V.

High dense cell design for extremely low RDS(ON).

Rugged and reliable.

SOT-323 package.

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation

VDS

VGS

ID

PD

IDM

20

0.35

8.8

2.2

±12

V

W

A

V

1

S

G

D

RoHS compliant.

Rev 1. 2021.May

http://www.cet-mos.com

RDS(ON) = 110mW @VGS = 1.8V.

Details are subject to change without notice .

G

D

S

SOT-323(SC-70)

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient b

Parameter

Symbol

Limit

Units

C/W

360

RqJA

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