CEZC0410SL datasheet(1/6 Pages) CET-MOS

部品番号	CEZC0410SL

部品情報	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

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メーカー	CET-MOS [CET-MOS Technology Corp.]

ホームページ	https://www.cet-mos.com/en/index.asp

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CEZC0410SL

FEATURES

100V, 10A, RDS(ON) = 120mW @VGS = 10V.

Super High dense cell design for extremely low RDS(ON).

High power and current handing capability.

1

RoHS compliant.

http://www.cet-mos.com

Rev 2. 2019.Nov

S

G

D

Details are subject to change without notice .

N-Channel Enhancement Mode Field Effect Transistor

RDS(ON) = 130mW @VGS = 5V.

RDS(ON) = 165mW @VGS = 3V.

Thermal Characteristics

Thermal Resistance, Junction-to-Case b

Parameter

Symbol

Limit

Units

C/W

5

RqJc

Thermal Resistance, Junction-to-Ambient b

C/W

50

RqJA

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Maximum Power Dissipation

VDS

VGS

ID

PD

IDM

100

25

8

2

±16

V

W

A

V

Drain Current-Continuous

ID

10

A

Drain Current-Pulsed a

IDM

40

A

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

@RqJC

@RqJA

P-PAK 3X3

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