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BAS416-Q データシート(PDF) 1 Page - Nexperia B.V. All rights reserved |
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BAS416-Q データシート(HTML) 1 Page - Nexperia B.V. All rights reserved |
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1 / 9 page ![]() BAS416-Q Low-leakage switching diode 18 April 2023 Product data sheet 1. General description Epitaxial, medium-speed switching diode with a low-leakage current encapsulated in a small SOD323 SMD plastic package. 2. Features and benefits • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 us • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Low-leakage current applications in surface mounted circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current - - 200 mA VRRM repetitive peak reverse voltage Tj = 25 °C - - 85 V VF forward voltage IF = 50 mA; Tj = 25 °C - - 1.1 V IR reverse current VR = 75 V; pulsed; Tj = 25 °C - 0.003 5 nA trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tj = 25 °C - 0.8 3 µs 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 2 A anode 2 1 SOD323 aaa-032142 K A |
同様の部品番号 - BAS416-Q |
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同様の説明 - BAS416-Q |
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