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BFG93A/X データシート(PDF) 2 Page - NXP Semiconductors

部品番号 BFG93A/X
部品情報  NPN 6 GHz wideband transistors
PDF  16 Pages
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFG93A/X データシート(HTML) 2 Page - NXP Semiconductors

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1998 Sep 23
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
FEATURES
• High power gain
• Low noise figure
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
NPN transistor in a 4-pin, dual-emitter
SOT143B plastic package.
PINNING
PIN
DESCRIPTION
BFG93A
1
collector
2
base
3
emitter
4
emitter
BFG93A/X
1
collector
2
emitter
3
base
4
emitter
MARKING
TYPE NUMBER
CODE
BFG93A
R8
BFG93A/X
V15
Fig.1 SOT143B.
handbook, 2 columns
Top view
MSB014
12
3
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−
15
V
VCEO
collector-emitter voltage
open base
−−
12
V
IC
collector current (DC)
−−
35
mA
Ptot
total power dissipation
Ts ≤ 85 °C
−−
300
mW
Cre
feedback capacitance
IC =ic = 0; VCB = 5 V; f = 1 MHz
0.6
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4.5
6
GHz
GUM
maximum unilateral
power gain
IC = 30 mA; VCE =8V; Tamb =25 °C;
f = 1 GHz
16
dB
IC = 30 mA; VCE =8V; Tamb =25 °C;
f = 2 GHz
10
dB
F
noise figure
Γ
s = Γopt; IC = 5 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
1.7
dB



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