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BFG93A/X データシート(PDF) 2 Page - NXP Semiconductors |
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BFG93A/X データシート(HTML) 2 Page - NXP Semiconductors |
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2 / 16 page ![]() 1998 Sep 23 2 Philips Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range. DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. PINNING PIN DESCRIPTION BFG93A 1 collector 2 base 3 emitter 4 emitter BFG93A/X 1 collector 2 emitter 3 base 4 emitter MARKING TYPE NUMBER CODE BFG93A R8 BFG93A/X V15 Fig.1 SOT143B. handbook, 2 columns Top view MSB014 12 3 4 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 15 V VCEO collector-emitter voltage open base −− 12 V IC collector current (DC) −− 35 mA Ptot total power dissipation Ts ≤ 85 °C −− 300 mW Cre feedback capacitance IC =ic = 0; VCB = 5 V; f = 1 MHz − 0.6 − pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 − GHz GUM maximum unilateral power gain IC = 30 mA; VCE =8V; Tamb =25 °C; f = 1 GHz − 16 − dB IC = 30 mA; VCE =8V; Tamb =25 °C; f = 2 GHz − 10 − dB F noise figure Γ s = Γopt; IC = 5 mA; VCE =8V; Tamb =25 °C; f = 1 GHz − 1.7 − dB |
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