DMN2009USS

Document number: DS41068 Rev. 3 - 2

2 of 7

www.diodes.com

August 2018

© Diodes Incorporated

DMN2009USS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

12

V

Drain Current (Note 6) VGS = 4.5V

Steady State

TA = +25°C

TA = +70°C

ID

12.1

9.7

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

3

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

100

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

1.4

W

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)

RJA

90

°C/W

Total Power Dissipation (Note 6)

PD

2.0

W

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)

RJA

63

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

20





V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS





1

μA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS





100

nA

VGS = 12V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

0.5

0.7

1.2

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)







6.3

6.7

8.7

8

9

12

m

Ω

VGS = 10V, ID = 12A

VGS = 4.5V, ID = 10A

VGS = 2.5V, ID = 8A

Diode Forward Voltage

VSD

0.5

0.63

1.2

V

VGS = 0V, IS = 3A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



1706



pF

VDS = 10V, VGS = 0V, f = 1MHz

Output Capacitance

Coss



383



pF

Reverse Transfer Capacitance

Crss



176



pF

Gate Resistance

Rg



3.0



Ω

VGS = 0V VDS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg



16



nC

VDS = 10V, ID = 8.5A

Total Gate Charge (VGS = 10V)

Qg



34



Gate-Source Charge

Qgs



1.9



Gate-Drain Charge

Qgd



4.5



Turn-On Delay Time

tD(ON)



4.2



ns

VDS = 10V, ID = 8.5A

VGS = 4.5V, Rg = 1.8Ω

Turn-On Rise Time

tR



6.2



ns

Turn-Off Delay Time

tD(OFF)



25



ns

Turn-Off Fall Time

tF



11



ns

Body Diode Reverse Recovery Time

tRR



12



ns

IF = 8.5A, di/dt = 210A/μs

Body Diode Reverse Recovery Charge

QRR



4.7



nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.