Nexperia

BAS30LS

High-speed switching diode

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

K

cathode

2

A

anode

Transparent

top view

2

1

DFN1006BD-2 (SOD882BD)

aaa-028035

K

A

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAS30LS

DFN1006BD-2 Leadless ultra small plastic package with side-wettable

flanks (SWF); 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm

x 0.47 mm body

SOD882BD

7. Marking

Table 4. Marking codes

Type number

Marking code

BAS30LS

3N

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

300

V

VR

reverse voltage

-

300

V

IF

forward current

Tj = 25 °C

[1]

-

250

mA

tp = 50 µs; square wave; Tj(init) = 25 °C

-

9.5

A

IFSM

non-repetitive peak

forward current

tp = 10 ms; square wave; Tj(init) = 25 °C

-

2.1

A

IFRM

repetitive peak forward

current

tp ≤ 1 ms; δ ≤ 0.25

-

1

A

[1]

-

335

mW

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

610

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 70 µm copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 70 µm copper, tin-plated mounting pad for cathode 1cm2.

BAS30LS

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© Nexperia B.V. 2021. All rights reserved

Product data sheet

3 November 2021

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