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PMST4403 データシート(PDF) 5 Page - Nexperia B.V. All rights reserved |
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PMST4403 データシート(HTML) 5 Page - Nexperia B.V. All rights reserved |
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5 / 13 page ![]() © Nexperia B.V. 2017. All rights reserved Nexperia PMST4403 40 V, 600 mA PNP switching transistor PMST4403 All information provided in this document is subject to legal disclaimers. Product data sheet 1 August 2016 5 / 13 aaa-014458 200 400 600 hFE 0 IC (mA) -10-1 -103 -102 -1 -10 (1) (2) (3) VCE = -2 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3. DC current gain as a function of collector current; typical values VCE (V) 0 -2 -1.5 -0.5 -1 aaa-014459 -0.4 -0.6 -0.2 -0.8 -1 IC (A) 0 IB = -23 mA -20.7 -18.4 -16.1 -13.8 -11.5 -9.2 -6.9 -4.6 -2.3 Tamb = 25 °C Fig. 4. Collector current as a function of collector- emitter voltage; typical values aaa-014475 -0.4 -0.8 -1.2 VBE (V) 0 IC (mA) -10-1 -103 -102 -1 -10 (1) (2) (3) VCE = -2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig. 5. Base-emitter voltage as a function of collector current; typical values aaa-014476 -0.6 -0.8 -0.4 -1.0 -1.2 VBEsat (V) -0.2 IC (mA) -10-1 -103 -102 -1 -10 (1) (2) (3) IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig. 6. Base-emitter saturation voltage as a function of collector current; typical values |
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