BAS28

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© Nexperia B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 22 July 2010

3 of 12

Nexperia

BAS28

High-speed double diode

5.

Limiting values

[1] Device mounted on an FR4 PCB.

[2] One diode loaded.

[3] Tj =25 °C prior to surge.

6.

Thermal characteristics

[1] Device mounted on an FR4 PCB.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VRRM

repetitive peak

reverse voltage

-85

V

VR

reverse voltage

-

75

V

IF

forward current

[1] -215

mA

IFRM

repetitive peak

forward current

-500

mA

IFSM

non-repetitive peak

forward current

square wave

[3]

tp =1 μs-

4

A

tp =1ms

-

1

A

tp =1s

-

0.5

A

Per device

Ptot

total power dissipation

Tamb =25 °C

[1][2] -250

mW

Tj

junction temperature

-

150

°

C

Tstg

storage temperature

−

65

+150

°

C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device; one diode loaded

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

500

K/W

Rth(j-t)

thermal resistance from

junction to tie-point

-

-

360

K/W