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BAS21W_SER_1

Product data sheet

Rev. 01 — 9 October 2009

3 of 11

Nexperia

BAS21W series

High-voltage switching diodes

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Single diode loaded.

[2]

Double diode loaded.

[3]

Tj =25 °C prior to surge.

[4]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 5.

Marking codes

Type number

Marking code[1]

BAS21W

X4*

BAS21AW

X6*

BAS21SW

X5*

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VR

reverse voltage

-

250

V

IF

forward current

[1] -

225

mA

[2] -

125

mA

IFRM

repetitive peak forward

current

-

625

mA

IFSM

non-repetitive peak forward

current

square wave

[3]

tp =1 µs-

9

A

tp = 100 µs-

3

A

tp =10ms

-

1.7

A

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[4] -

200

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C