Nexperia

BAS521

Single high-voltage switching diode

10. Characteristics

Table 7. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)R

reverse breakdown

voltage

IR = 100 µA

300

340

-

V

VF

forward voltage

IF = 100 mA; tp = 300 µs; δ = 0.02;

pulsed

-

0.95

1.1

V

VR = 250 V

-

30

150

nA

IR

reverse current

VR = 250 V; Tamb = 150 °C

-

40

100

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz

-

0.4

5

pF

trr

reverse recovery time

IF = 30 mA; IR = 30 mA; RL = 100 Ω;

IR(meas) = 3 mA

-

16

50

ns

0

0.5

1

1.5

IF

(mA)

VF (V)

500

0

400

300

200

100

mhc618

(2)

(1)

(3)

(1) Tamb = 150° C

(2) Tamb = 75° C

(3) Tamb = 25° C

Fig. 3. Forward current as a function of forward

voltage; typical values

200

0

40

80

120

IR

(µA)

160

Tj (°C)

102

10

1

10- 1

10- 2

mhc619

VR = VRmax

Fig. 4. Reverse current as a function of junction

temperature; typical values

BAS521

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Product data sheet

29 June 2018

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