1.

Product profile

1.1 General description

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has

been designed to cover a wide range of applications for ISM, broadcast and

communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz.

[1]

Class EF2 generator.

[2]

Test circuit.

[3]

tp =100 s;  =10%.

1.2 Features and benefits

 High breakdown voltage enables class E operation up to VDS =53V

 Qualified up to a maximum of VDS =65V

 Characterized from 30 V to 65 V to support a wide range of applications

 Integrated dual sided ESD protection enables class C operation and complete switch

off of the transistor

 Excellent ruggedness with no device degradation

 High efficiency

 Excellent thermal stability

 Designed for broadband operation

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 Industrial, scientific and medical applications

 Plasma generators

 MRI systems

 Particle accelerators

 Defrosting

 Broadcast

 FM radio

 VHF TV

ART150PE; ART150PEG

Power LDMOS transistor

Rev. 1 — 13 January 2023

Product data sheet

Table 1.

Application information

Test signal

f

VDS

PL

Gp



D

(MHz)

(V)

(W)

(dB)

(%)

CW [1]

6.78

63

150

-

86.5

CW

41

60

150

29.2

85.6

CW

41

65

150

31.7

80

CW [2]

108

65

150

31.0

81.7

CW pulsed [2][3]

108

65

150

31.5

81.4