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BFR93. データシート(PDF) 2 Page - NXP Semiconductors |
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BFR93. データシート(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page  1997 Oct 29 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 FEATURES • Very low intermodulation distortion • High power gain • Excellent wideband properties and low noise up to high frequencies due to its very high transition frequency. APPLICATIONS • RF wideband amplifiers and oscillators. DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 SOT23. page MSB003 Top view 12 3 Marking code: R1p. QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V IC collector current (DC) − 35 mA Ptot total power dissipation Ts ≤ 95 °C − 300 mW Cre feedback capacitance IC = 2 mA; VCE = 5 V; f = 1 MHz 0.8 − pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz; Tj =25 °C 5 − GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 500 MHz; Tamb =25 °C 16.5 − dB F noise figure IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb =25 °C 1.9 − dB dim intermodulation distortion IC = 30 mA; VCE =5V; RL =75 Ω; VO = 300 mV; fp +fq − fr = 493.25 MHz; Tamb =25 °C −60 − dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2V IC collector current (DC) − 35 mA Ptot total power dissipation Ts ≤ 95 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C |
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