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AM29BL162C データシート(PDF) 46 Page - SPANSION

部品番号 AM29BL162C
部品情報  16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
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AM29BL162C データシート(HTML) 46 Page - SPANSION

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Am29BL162C
July 8, 2005
DA T A
SH EET
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V VCC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 3.0 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 8 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
SSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
* For reference only. BSC is an ANSI standard for Basic Space Centering
Parameter
Typ (Note 1)Max (Note 2)
Unit
Comments
Sector Erase Time
5
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
55
s
Word Programming Time
9
360
µs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)18
54
s
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C
10
Years
125
°C
20
Years



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