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AM29BL162C データシート(PDF) 46 Page - SPANSION |
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AM29BL162C データシート(HTML) 46 Page - SPANSION |
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46 / 50 page ![]() 44 Am29BL162C July 8, 2005 DA T A SH EET ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V VCC, 100,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 3.0 V, 100,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 8 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 100,000 cycles. LATCHUP CHARACTERISTICS Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. SSOP PIN CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION * For reference only. BSC is an ANSI standard for Basic Space Centering Parameter Typ (Note 1)Max (Note 2) Unit Comments Sector Erase Time 5 15 s Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 55 s Word Programming Time 9 360 µs Excludes system level overhead (Note 5) Chip Programming Time (Note 3)18 54 s Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V VCC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Parameter Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C 10 Years 125 °C 20 Years |
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