Wuxi NCE Power Co., Ltd

Page

v2.0

2

NCE3095G

http://www.ncepower.com

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

30

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=30V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1

1.5

2.5

V

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=20A

-

3.5

4.2

mΩ

VGS=4.5V, ID=20A

-

5.3

7.3

Forward Transconductance

gFS

VDS=5V,ID=20A

30

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

VDS=15V,VGS=0V,

F=1.0MHz

-

1784

-

PF

Output Capacitance

Coss

-

266

-

PF

Reverse Transfer Capacitance

Crss

-

212

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

VDD=5V,ID=20A

VGS=10V,RGEN=6Ω

-

7

-

nS

Turn-on Rise Time

tr

-

6

-

nS

Turn-Off Delay Time

td(off)

-

30

-

nS

Turn-Off Fall Time

tf

-

8

-

nS

Total Gate Charge

Qg

VDS=15V,ID=20A,

VGS=10V

-

38.4

-

nC

Gate-Source Charge

Qgs

-

5.8

-

nC

Gate-Drain Charge

Qgd

-

7.9

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=20A

-

0.85

1.2

V

Diode Forward Current

(Note 2)

IS

-

-

95

A

Reverse Recovery Time

trr

TJ = 25°C, IF = 20A

di/dt = 100A/μs

(Note3)

-

-

47

nS

Reverse Recovery Charge

Qrr

-

-

25

nC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.1mH,Rg=25Ω