November 1992

3

Philips Semiconductors

Product specification

UHF power MOS transistor

BLF521

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

Note

1. Mounted on printed circuit board, see Fig.12.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

40

V

gate-source voltage

−

20

V

DC drain current

−

1A

total power dissipation

−

10

W

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

THERMAL

RESISTANCE

thermal resistance from junction to mounting base

17.5 K/W

thermal resistance from junction to ambient (note 1)

75 K/W

Fig.2 DC SOAR.

handbook, halfpage

0.1

1

1

10

100

5

(1)

ID

(A)

VDS (V)

MRA989

(2)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

handbook, halfpage

0

40

80

160

16

12

4

0

8

120

MDA486

(1)

(2)

Ptot

(W)

Tmb ( °C)