HIGH TEMPERATURE 32K x 8 STATIC RAM

HT6256

• Specified Over -55 to +225

°C

• Fabricated with HTMOS™ IV Silicon on Insulator (SOI)

• Read/Write Cycle Times

≤ 50 ns Support 20 MHz Clock

• Asynchronous Operation

• CMOS Input/Output Buffers

• Single 5 V

± 10% Power Supply

• Hermetic 28-Lead Ceramic DIP

• Down-Hole Oil Well

• Avionics

• Turbine Engine Control

• Industrial Process Control

• Nuclear Reactor

• Electric Power Conversion

• Heavy Duty Internal Combustion Engines

APPLICATONS

The 32K x 8 High Temperature Static RAM is a high

performance 32,768 word x 8-bit static random access

memory with industry-standard functionality. It is fabri-

cated with Honeywell’s HTMOS™ technology, and is

designed for use in systems operating in severe high

temperature environments.

The RAM requires only a single 5 V

± 10% power supply

and has CMOS compatible I/O. Power consumption is

typically less than 30 mW/MHz in operation, and less than

10 mW when de-selected. The RAM read operation is fully

asynchronous, with an associated typical access time of

50 ns at 5 V.

The RAM provides guaranteed performance over the full

-55 to +225

°C temperature range. Typically, parts will

operate up to +300

°C for a year, with derated perfor-

mance. All parts are burned in at 250

°C to eliminate infant

mortality.

GENERAL DESCRIPTION

FEATURES

PACKAGE PINOUT

VDD

NWE

A13

A8

A9

A11

NOE

A10

NCS

DQ7

DQ6

DQ5

DQ4

DQ3

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

VSS

28

27

26

25

24

23

22

21

20

19

18

17

16

15

1

2

3

4

5

6

7

8

9

10

11

12

13

14

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Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com